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GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
(Electrically Isolated Back Surface)
IXGR60N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 30A 2.5V 50ns
High Speed PT IGBT for 40-100kHz Switching
ISOPLUS247TM Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by leads) TC = 110C TC = 110C TC = 25C, 1ms TC = 25C TC = 25C VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C Maximum Ratings 600 600 20 30 75 30 13 260 40 400 ICM = 125 @ VCE VCES 170 -55 ... +150 150 -55 ... +150 2500 3000 20..120/4.5..27 300 260 5 W C C C V~ V~ N/lb C C g V V V V A A A A A mJ A Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode High Speed Silicon Carbide Schottky Co-Pack Diode - No Reverse Recovery 2500V Electrical Isolation Avalanche Rated Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 40A, VGE = 15V, Note 1 TJ = 125C 2.2 1.7 TJ = 125C Characteristic Values Min. Typ. Max. 3.0 5.5 50 1 100 2.5 V A mA nA V V High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts G = Gate E = Emitter
G C E Isolated Tab
C = Collector
(c) 2010 IXYS CORPORATION, All Rights Reserved
DS100098B(01/10)
IXGR60N60C3C1
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive Load, TJ = 125C IC = 40A, VGE = 15V VCE = 480V, RG = 3 Note 2 IC = 50A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 40A, VCE = 10V, Note 1 Characteristic Values Min. Typ. Max. 23 38 2810 210 80 115 43 22 24 Inductive Load, TJ = 25C IC = 40A, VGE = 15V VCE = 480V, RG = 3 Note 2 40 0.83 70 50 0.45 23 39 0.78 112 86 0.80 0.15 0.80 110 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.73 C/W C/W ISOPLUS247 (IXGR) Outline
Reverse Diode (SiC) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VF RthJC IF = 20A, VGE = 0V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1.65 1.80 2.10 V V
1.75 C/W
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGR60N60C3C1
Fig. 1. Output Characteristics @ T J = 25C
80 70 60 VGE = 15V 13V 11V 9V 300 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ T J = 25C
250
50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 7V
IC - Amperes
IC - Amperes
200
150 9V 100
50 5V 0 0 2 4
7V 5V 6 8 10 12 14 16
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
80 70 60 VGE = 15V 13V 11V 1.2
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.1 I
C
= 80A
VCE(sat) - Normalized
9V
1.0 0.9 I 0.8 0.7 0.6 0.5 I = 20A
C
IC - Amperes
50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 5V 7V
= 40A
C
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.0 5.5 5.0 TJ = 25C 160 140 120
Fig. 6. Input Admittance
VCE - Volts
4.5 4.0 3.5 3.0 2.5 2.0 6 7 8
IC - Amperes
I
C
= 80A 40A 20A
100 80 60 40 20 0 TJ = 125C 25C - 40C
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
VGE - Volts
VGE - Volts
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGR60N60C3C1
Fig. 7. Transconductance
70 TJ = - 40C 60 50 25C 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 90 100 110 120 16 VCE = 300V I C = 40A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
40 30 20 10 0
IC - Amperes
VGE - Volts
125C
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 140 120
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
Cies
100
IC - Amperes
1,000 Coes
80 60 40 TJ = 125C RG = 3 dv / dt < 10V / ns
100 Cres
f = 1 MHz
10 0 5 10 15 20 25 30 35 40
20 0 100
150
200
250
300
350
400
450
500
550
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGR60N60C3C1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
4.5 4.0 3.5 Eoff VCE = 480V Eon 4.5 3.0 Eoff VCE = 480V Eon 4.0 2.5 3.5
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
3.0
---
----
TJ = 125C , VGE = 15V
RG = 3 , VGE = 15V
2.5
Eoff - MilliJoules
E off - MilliJoules
3.0 2.5 2.0 1.5 1.0 0.5 0.0 3 4 5 6 7 8 9 10 11 12 13 14 15 I C = 40A I
C
3.0 = 80A 2.5 2.0 1.5 1.0
2.0 TJ = 125C, 25C
2.0
E on - MilliJoules
E on - MilliJoules
1.5
1.5
1.0
1.0
0.5 0.5 0.0 0.0 20 25 30 35 40 45 50 55 60 65 70 75 80
0.5
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
4.0 3.5 3.0 Eoff VCE = 480V Eon 4.0 170 160 150 3.0 140
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
280 260 240 220 200 180 I
C
----
RG = 3 , VGE = 15V
3.5
tf
VCE = 480V
td(off) - - - -
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eon - MilliJoules
Eoff - MilliJoules
2.5 I C = 80A 2.0 1.5 1.0 0.5 0.0 25 35 45 55 65 75 85 95 105 115
2.5 2.0 1.5 1.0 0.5 0.0 125
130 120 110 100 90 80 I
C
= 80A
160 140 = 40A 120 100 80 60
I C = 40A
70 60 3 4 5 6 7 8 9 10 11 12 13 14 15
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
180 160 140 200 160 140 120 100 80
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
150 180 160
tf
VCE = 480V
td(off) - - - -
tf
VCE = 480V
td(off) - - - -
RG = 3 , VGE = 15V
RG = 3 , VGE = 15V
135
t d(off) - Nanoseconds
t f - Nanoseconds
120 100 80 60 40 20 0 20 25 30 35 40 45 50 55 60 65 70 75 80 TJ = 25C TJ = 125C
140 120 100 80 60 40 20
t f - Nanoseconds
120 105 90 I C = 40A 75 60 45 125
t d(off) - Nanoseconds
I C = 80A
60 40 20 25 35 45 55 65 75 85 95 105 115
IC - Amperes
TJ - Degrees Centigrade
(c) 2010 IXYS CORPORATION, All Rights Reserved
IXGR60N60C3C1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
140 50 140 120
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
32
tr
120 VCE = 480V
td(on) - - - 45
TJ = 125C, VGE = 15V
tr
VCE = 480V
td(on) - - - -
30 28 TJ = 25C, 125C 26 24 22 20 18
RG = 3 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
100 I 80
C
40 = 80A 35
t r - Nanoseconds
100 80 60 40 20 0 20
t d(on) - Nanoseconds
60
I
C = 40A
30
40
25
20 3 4 5 6 7 8 9 10 11 12 13 14 15
20
25
30
35
40
45
50
55
60
65
70
75
80
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
140 32 50 45 30 40
Fig. 21. Forward Current vs. Forward Voltage
tr
120 VCE = 480V
td(on) - - - t d(on) - Nanoseconds
RG = 3 , VGE = 15V
t r - Nanoseconds
100 I C = 80A
28
35
TJ = 25C TJ = 125C
IF - Amperes
30 25 20 15 10 5
80
26
60 I 40
C
24 = 40A 22
20 25 35 45 55 65 75 85 95 105 115
20 125
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ - Degrees Centigrade
VF - Volts
Fig. 22. Maximum Transient Thermal Impedance for Diodes
10.0
Z(th)JC - C / W
1.0
0.1 0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_60N60C3C1(6D)01-15-10-A

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